型号 功能描述 生产厂家&企业 LOGO 操作

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

封装/外壳:20-LCC(J 形引线) 包装:管件 描述:IC CPLD 8MC 25NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

封装/外壳:20-LCC(J 形引线) 包装:管件 描述:IC CPLD 8MC 25NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLD

文件:340.72 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:395.51 Kbytes Page:22 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:654.14 Kbytes Page:24 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic?

文件:339.82 Kbytes Page:23 Pages

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

GAL16V8D-25产品属性

  • 类型

    描述

  • 型号

    GAL16V8D-25

  • 功能描述

    SPLD - 简单可编程逻辑器件 5V 16 I/O

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2025-8-1 10:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
17+
6200
100%原装正品现货
LATTICE
24+
NA
16087
只做原装正品现货 欢迎来电查询15919825718
Lattice(莱迪斯)
2021/2022+
标准封装
3500
原厂原装现货订货价格优势终端BOM表可配单提供样品
Lattice
23+
DIP
8560
受权代理!全新原装现货特价热卖!
Lattice Semiconductor Corporat
24+
20-PDIP
56200
一级代理/放心采购
Lattice
23+
2800
正品原装货价格低
Lattice
21+
DIP20
9800
只做原装正品假一赔十!正规渠道订货!
LATTICE/莱迪斯
25+23+
DIP20
13397
绝对原装正品全新进口深圳现货
LATTICE原现
23+
DIP-20
25000
全新原装现货,假一赔十
LatticeSemiconductorCorp
24+
20-PDIP
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

GAL16V8D-25芯片相关品牌

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  • TRUMPOWER
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