位置：首页 > IC中文资料第2673页 > GA200
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GA200 | SCRsNanosecondSwitching,Planar DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  |   |
GA200 | SILICONCONTROLLEDRECTIFIERNANOSECONDSWITCHINGPLANAR 文件：173.42 Kbytes Page：4 Pages | DIGITRON Digitron Semiconductors |  | |
SCRsNanosecondSwitching,Planar DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
HALF-BRIDGEIGBTINT-A-PAK Features •Generation4IGBTTechnology •Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz •VeryLowConductionLosses •Industrystandardpackage Benefits •Increasedoperatingefficiency •Directmountingtoheatsink •Performanceoptimi | IRF International Rectifier |  | | |
HALF-BRIDGEIGBTINT-A-PAKStandardSpeedIGBT Features •Generation4IGBTTechnology •Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz •VeryLowConductionLosses •Industrystandardpackage Benefits •Increasedoperatingefficiency •Directmountingtoheatsink •Performanceoptimi | IRF International Rectifier | | | |
Half-BridgeIGBTINT-A-PAK(StandardSpeedIGBT),200A FEATURES •Generation4IGBTtechnology •Standard:OptimizedforhardswitchingspeedDCto1kHz •Verylowconductionlosses •Industrystandardpackage •ULapprovedfileE78996 •ComplianttoRoHSdirective2002/95/EC •Designedandqualifiedforindustriallevel BENEFITS •Increased | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
HighSideSwitchChopperModuleUltra-FastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystandardpackage •ULapproved •Generation4IGBTtechnology B | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2,500voltAC) •Verylowinternalinductance(5nHtyp.) •Industrystanda | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2,500voltAC) •Verylowinternalinductance(5nHtyp.) •Industrystanda | IRF International Rectifier | | | |
InsulatedGateBipolarTransistorUltralowVCE(on),342A InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES •Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2500VAC) •Verylowinternalinductance(5nHtypi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
InsulatedGateBipolarTransistorUltralowVCE(on),342A FEATURES •Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2500VAC) •Verylowinternalinductance(5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •ComplianttoRoHSdirective | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
INSULATEDGATEBIPOLARTRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2,500voltAC) •Verylowinternalinductance(5nHtyp.) •Industrystanda | IRF International Rectifier | | | |
InsulatedGateBipolarTransistorUltralowVCE(on),342A InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES •Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2500VAC) •Verylowinternalinductance(5nHtypi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
InsulatedGateBipolarTransistorUltralowVCE(on),342A FEATURES •Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2500VAC) •Verylowinternalinductance(5nHtypical) •Industrystandardoutline •ULapprovedfileE78996 •ComplianttoRoHSdirective | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforminimumsaturationvoltageandoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •Fullyisolatepackage(2,500VoltAC/RMS) •Verylowinternalinductance(≤5nHtyp.) • | IRF International Rectifier | | | |
InsulatedGateBipolarTransistor(UltrafastSpeedIGBT),100A FEATURES •Ultrafast:Optimizedforminimumsaturationvoltageandspeedupto40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •Fullyisolatepackage(2500VAC/RMS) •Verylowinternalinductance(≤5nHtypical) •Industrystandardo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
IGBT DESCRIPTION ·LowVCE(sat)forminimumon-stateconductionlosses ·Veryhighcurrent,fastswitchingIGBT ·MOSGateturn-ondrivesimplicity APPLICATIONS ·ACmotorspeedcontrol ·DCservoandrobotdrives ·Uninterruptiblepowersupplies(UPS) | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HALF-BRIDGEIGBTDOUBLEINT-A-PAK Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystandardpackage •ULapproved •Generation4IGBTtechnology B | IRF International Rectifier | | | |
HALF-BRIDGEIGBTINT-A-PAKUltra-FastSpeedIGBT HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystan | IRF International Rectifier | | | |
Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A FEATURES •Generation4IGBTtechnology •Ultrafast:Optimizedforhighspeed8kHzto40kHzinhardswitching,>200kHzinresonant mode •Verylowconductionandswitchinglosses •HEXFRED®antiparalleldiodeswithul | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Ultra-FastTMSpeedIGBT HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features •Generation4IGBTtechnology •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFREDTMantiparalleldiodeswithul | IRF International Rectifier | | | |
封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS GAUGE 5\ 传感器，变送器 压力传感器、变送器 | ETC 知名厂家 | ETC | | |
封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS DIFF 10\ 传感器，变送器 压力传感器、变送器 | ETC 知名厂家 | ETC | | |
SILICONCONTROLLEDRECTIFIERNANOSECONDSWITCHINGPLANAR 文件：173.42 Kbytes Page：4 Pages | DIGITRON Digitron Semiconductors | | | |
TOGGLESWITCHES-SUBMINIATURE 文件：718.4 Kbytes Page：5 Pages | E-SWITCH E-switch |  | | |
BulkMetal®FoilTechnologyConformallyCoatedPrecisionCurrentSensingResistorswithTCRof5ppm/°Candvaluesdownto5mΩ 文件：105.62 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
100/200 文件：3.83844 Mbytes Page：2 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
EasyIdentificationandTracingwith10-colorCable 文件：1.18408 Mbytes Page：2 Pages | ARIES Aries Electronics,inc |  | | |
Resistanttotearsandpunctures 文件：225.28 Kbytes Page：2 Pages | LSTD Laird Tech Smart Technology |  | |
GA200产品属性
- 类型
描述
- 型号
GA200
- 制造商
Microsemi Corporation
- 功能描述
THYRISTOR SCR 60V 3PIN TO-18 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SHARP/夏普 |
24+ |
NA/ |
11550 |
原装现货,当天可交货,原型号开票 |
|||
HAR |
23+ |
DIP-16 |
6500 |
全新原装假一赔十 |
|||
GEOYOUNG |
25+ |
SMD |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
GEOYOUNG |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
IR |
1950+ |
980 |
只做原装正品现货!或订货假一赔十! |
||||
IR |
23+ |
55 |
|||||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
SHARP |
8 |
SOP10 |
8300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
23+ |
模块 |
3562 |
||||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
GA200芯片相关品牌
GA200规格书下载地址
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