SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

HALF-BRIDGE IGBT INT-A-PAK

Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimi

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimi

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Increased

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) •

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance (≤ 5 nH typical) • Industry standard o

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFRED™antiparallel diodes with ultra-soft recovery • Industry stan

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ul

Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ul

封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS GAUGE 5\ 传感器，变送器 压力传感器、变送器

压力传感器

压力传感器

封装/外壳：3-SIP 模块 包装：散装 描述：SENSOR PRESS DIFF 10\ 传感器，变送器 压力传感器、变送器

压力传感器

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件：173.42 Kbytes Page：4 Pages

Easy Identification and Tracing with 10-color Cable

文件：1.18408 Mbytes Page：2 Pages

Resistant to tears and punctures

文件：225.28 Kbytes Page：2 Pages

100/200

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Bulk Metal® Foil Technology Conformally Coated Precision Current Sensing Resistors with TCR of 5 ppm/°C and values down to 5 mΩ

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TOGGLE SWITCHES - SUB MINIATURE

文件：718.4 Kbytes Page：5 Pages