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型号 功能描述 生产厂家 企业 LOGO 操作
GA200A

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

MICROSEMI

美高森美

GA200A

Thyristor SCR 3-Pin 60V TO-18

The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The Rise time: 10ns.\n Delay time: 10ns.\n Recovery time: 0.5µs.\n Pulse current: to 100A.\n Turn on with 20ns, 10mA Gate Pulse.;

MICROCHIP

微芯科技

GA200A

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件:173.42 Kbytes Page:4 Pages

DIGITRON

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

MITSUBISHI

三菱电机

GA200A产品属性

  • 类型

    描述

  • 型号

    GA200A

  • 制造商

    Microsemi Corporation

  • 功能描述

    GA200A - Bulk

更新时间:2026-5-23 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP
23+
7300
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