INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：IGBT MOD 600V 200A 630W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive