位置：首页 > IC中文资料第2053页 > GA200HS60S1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GA200HS60S1 | HALF-BRIDGEIGBTINT-A-PAKStandardSpeedIGBT Features •Generation4IGBTTechnology •Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz •VeryLowConductionLosses •Industrystandardpackage Benefits •Increasedoperatingefficiency •Directmountingtoheatsink •Performanceoptimi | IRF International Rectifier |  |   |
Half-BridgeIGBTINT-A-PAK(StandardSpeedIGBT),200A FEATURES •Generation4IGBTtechnology •Standard:OptimizedforhardswitchingspeedDCto1kHz •Verylowconductionlosses •Industrystandardpackage •ULapprovedfileE78996 •ComplianttoRoHSdirective2002/95/EC •Designedandqualifiedforindustriallevel BENEFITS •Increased | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Verylowconductionlosses VCES600V ICDC480A VCE(on)at200A,25°C1.13V SpeedDCto1kHz PackageINT-A-PAK CircuitHalfbridge FEATURES •Gen4IGBTtechnology •Standard:optimizedforhardswitchingspeed •Verylowconductionlosses •Industrystandardpackage •ULapprovedfileE78996 •Designedan | VishayVishay Siliconix 威世科技威世科技半导体 | | |
GA200HS60S1产品属性
- 类型
描述
- 型号
GA200HS60S1
- 功能描述
IGBT 模块 200 Volt 200 Amp
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
200A600V |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IR |
23+ |
模块 |
358 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
VISHAY |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
IR |
24+ |
模块 |
200 |
高端开关型 |
|||
IR |
22+ |
N/A |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
16+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
IR |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
精量 |
24+ |
DIP |
57053 |
只做原装假一罚万 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
GA200HS60S1芯片相关品牌
GA200HS60S1规格书下载地址
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