| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：443.75 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：443.75 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：295.63 Kbytes Page：10 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-3P |
1070 |
||||
IR |
26+ |
SOD123W |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
23+ |
7000 |
|||||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
VISHAY |
24+ |
TO-247 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
原装 |
最新 |
TO220 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
Infineon |
24+ |
NA |
3247 |
进口原装正品优势供应 |
|||
IR |
25+ |
TO220 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
23+ |
SOP-8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
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DdatasheetPDF页码索引
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