丝印代码：G2553Q1；MSP430G2x53 Automotive Mixed-Signal Microcontrollers

1 Features 1• Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Le

丝印代码：G2553Q1；MSP430G2x53 Automotive Mixed-Signal Microcontrollers

1 Features 1• Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Le

丝印代码：G2553Q1；MSP430G2x53 Automotive Mixed-Signal Microcontrollers

1 Features 1• Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Le

丝印代码：G2553Q1；MSP430G2x53 Automotive Mixed-Signal Microcontrollers

1 Features 1• Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 230 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Le

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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