The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source amplifier applications in 12.5 Volt mobile and base station equipment.

• Guaranteed Performance at 54 MHz, 12.5 Volts

Output Power — 55 Watts PEP

Power Gain — 13 dB Min

Two–Tone IMD — –25 dBc Max

Efficiency — 40 Min, Two–Tone Test

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Aluminum Nitride Package Electrical Insulator

• Circuit Board Photomaster Available by Ordering Document

MRF255PHT/D from Motorola Literature Distribution.