| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.16Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤160mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •Qualifiedaccordin | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：351.05 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
12048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
433 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
23+ |
TO247 |
12335 |
||||
INF |
11+ |
220-247 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
高特 |
25+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
22+ |
TO247 |
8000 |
原装正品支持实单 |
|||
INFINEON |
19+ |
TO-247 |
58966 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
INFINEON/英飞凌 |
2023+ |
TO-3P |
2360 |
主打螺丝模块系列 |
|||
INF进口原 |
17+ |
220-247 |
6200 |
||||
INFINEON |
23+ |
TO-3P |
6000 |
原装正品,假一罚十 |
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2019-4-16G2995-DDR终端稳压器
概述在G2995是一个线性稳压器设计，以满足JEDECSSTL-2和SSTL-3（系列存根终止逻辑）的DDR-SDRAM终端规范。它包含一个高速运算放大器，可提供出色的负载瞬态响应。这设备可以提供1.5A的连续电流和瞬态峰达至所需的应用程序中的3ADDR-SDRAM终止。具有独立VSENSE引脚，G2995可提供卓越的负载调节。在G2995提供作为参考VREF输出芯片组和DIMM的申请。在G2995可以轻松地提供准确的VTT和VREF电压，无需外部电阻器的印刷电路板领域可以减少。静态电流低至作为280μA@2.5V。因此，电力消耗满足低功耗的应用。
2013-1-29
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