| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：G2231；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 |   | ||
丝印代码：G2231；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231；MIXED SIGNAL MICROCONTROLLER FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231Q1；MSP430G2231 Automotive Mixed-Signal Microcontroller 1 Features • Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Les | TI 德州仪器 | | ||
丝印代码：G2231Q1；MSP430G2231 Automotive Mixed-Signal Microcontroller 1 Features • Qualified for Automotive Applications • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low-Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wakeup From Standby Mode in Les | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
丝印代码：G2231EP；MIXED SIGNAL MICROCONTROLLER 1FEATURES • Low Supply-Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture, | TI 德州仪器 | | ||
METAL GATE RF SILICON FET 文件：17.09 Kbytes Page：2 Pages | SEME-LAB | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR 文件：150.44 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Advanced LinCMOSE RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS 文件：585.24 Kbytes Page：27 Pages | TI 德州仪器 | | ||
Advanced LinCMOSE RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS 文件：585.24 Kbytes Page：27 Pages | TI 德州仪器 | | ||
Advanced LinCMOSE RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS 文件：585.24 Kbytes Page：27 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器原装正品 |
26+ |
TSSOP14 |
26520 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
TI/德州仪器 |
2152+ |
TSSOP14 |
9900 |
原装正品假一罚十 |
|||
TI/德州仪器 |
21+ |
TSSOP14 |
8080 |
只做原装,质量保证 |
|||
TI/德州仪器 |
23+ |
TSSOP14 |
15000 |
正规渠道,只有原装! |
|||
TI |
22+ |
TSSOP14 |
890 |
只做原装 |
|||
TI/德州仪器 |
25+ |
TSSOP14 |
32000 |
TI/德州仪器全新特价MSP430G2231IPW14R即刻询购立享优惠#长期有货 |
|||
TI |
25+ |
TSSOP14 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TI/德州仪器 |
25+ |
TSSOP14 |
4000 |
||||
TI |
21+ |
TSSOP14 |
9000 |
全新原装公司现货
|
|||
TI/德州仪器 |
2021+ |
TSSOP14 |
9000 |
原装现货,随时欢迎询价 |
G2231芯片相关品牌
G2231规格书下载地址
G2231参数引脚图相关
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G2231数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-16G2995-DDR终端稳压器
概述 在G2995是一个线性稳压器设计，以满足JEDEC SSTL- 2和SSTL- 3（系列存根终止逻辑）的DDR- SDRAM终端规范。它包含一个高速运算放大器，可提供出色的负载瞬态响应。这设备可以提供1.5A的连续电流和瞬态峰达至所需的应用程序中的3ADDR- SDRAM终止。具有独立VSENSE引脚，G2995可提供卓越的负载调节。在G2995提供作为参考VREF输出芯片组和DIMM的申请。在G2995可以轻松地提供准确的VTT和VREF电压，无需外部电阻器的印刷电路板领域可以减少。静态电流低至作为280μA@2.5V。因此，电力消耗满足低功耗的应用。
2013-1-29
DdatasheetPDF页码索引
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