小型化/高性能 GSM/GPRS四频模组

G210是一款性能稳定、外观小巧、性价比高的四频LGA封装GSM/GPRS模块，尺寸仅为16.2mm×18.2mm×2.4mm，最大限度地满足客户的多样化需求，有效帮助客户减小产品尺寸并优化产品成本。 ：  \n尺寸(mm) ：16.2×18.2×2.4 \n封装 ：LGA \n频段(MHz) ：850/900/1800/1900 \n重量(g) ：1.2 \n工作温度(℃) ：-40 ~ +85 \n \n 数据传输 ：  \n上下行速率(kbps) ：85.6(DL)/85.6(UL) \nGPRS多时隙 ：×12 \nSMS ：● \n网络协议 ：TCP/UDP/PPP/HTTP/FTP/PING/NTP/NITZ/SSL/MQTT/HTTPS \n  ：  \n ;

丝印代码：G2100；LMG2100R044 100V, 35A GaN Half-Bridge Power Stage

1 Features • Integrated 4.4mΩ half-bridge GaN FETs and driver • 90V continuous, 100V pulsed voltage rating • Package optimized for easy PCB layout • High slew rate switching with low ringing • 5V external bias power supply • Supports 3.3V and 5V input logic levels • Gate driver capable of u

丝印代码：G2102；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2102；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2102；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2102；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2102；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2102；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G210P06；Single P-Channel Enhancement Mode MOSFET

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丝印代码：G210P06；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes Page：11 Pages

丝印代码：G210P06；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes Page：11 Pages

丝印代码：G210P06；P-Channel Enhancement Mode MOSFET

文件：1.32129 Mbytes Page：11 Pages

Multipurpose Enclosure

Enclosure Type : Multipurpose Enclosure Material : ABS Body Colour : Grey

RF POWER GAN TRANSISTOR

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Multipurpose Enclosure

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Multipurpose Enclosure

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7-Channel DC-DC Converter for DSC

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塑料机壳

7-Channel DC-DC Converter for DSC

7-Channel DC-DC Converter for DSC

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丝印代码：2105A；7-Channel DC-DC Converter for DSC

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丝印代码：2105B；7-Channel DC-DC Converter for DSC

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Photoflash Capacitor Charger for DSC

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包装：散装 描述：SHEARS OFFSET HANDLE 工具 刀，切割工具

包装：散装 描述：SHEARS OFFSET HANDLE 工具 刀，切割工具

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

POWER RECTIFIERS(2.0A,500-1000V)

Voltage Follower

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