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GaAsP photodiode

Features Low dark current High stability Red sensitivity extended type Applications Analytical instruments Color identification

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

GaAsP photodiode

Schottky type with extended red sensitivity Features ● Low dark current ● Extended red sensitivity ● High UV sensitivity Applications ● Analytical instrument ● Color identification ● UV detection

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

GaAsP photodiode

Schottky type with extended red sensitivity ● Low dark current\n● Extended red sensitivity\n● High UV sensitivityApplications\n● Analytical instrument\n● Color identification\n● UV detection;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

GaAsP photodiode

Schottky type with extended red sensitivity Features ● Low dark current ● Extended red sensitivity ● High UV sensitivity Applications ● Analytical instrument ● Color identification ● UV detection

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

PHILIPS

飞利浦

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

MOTOROLA

摩托罗拉

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

PHILIPS

飞利浦

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 35 mA low current operation. It is housed in a very small 6-pin minimold package available on t

NEC

瑞萨

G174产品属性

  • 类型

    描述

  • 型号

    G174

  • 制造商

    HAMAMATSU

  • 制造商全称

    Hamamatsu Corporation

  • 功能描述

    GaAsP photodiode

更新时间:2026-5-22 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAMAMAT
23+
CAN3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
HAMAMATSU
CAN3
6500
一级代理 原装正品假一罚十价格优势长期供货

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