The RF MOSFET Line 125W, 200MHz

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

The RF MOSFET Line 125W, 200MHz

Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. ·N–Channel Enhancement Mode MOSFET\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc\n·Facilitates Manual Gain Control, ALC and Modulation Techniques\n·Excellent Thermal Stability; ideally Suite for Class A Operations\n·Guaranteed Performance at 150 MHz, 28 Vdc: Output p;

封装/外壳：211-11，2 型 包装：散装 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-CHANNEL MOS BROADBAND RF POWER FET

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The RF MOSFET Line 125W, 200MHz

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The RF MOSFET Line

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The RF MOSFET Line 125W, 200MHz

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P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 35 mA low current operation. It is housed in a very small 6-pin minimold package available on t