N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

The RF MOSFET Line 125W, 200MHz

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

N-CHANNEL MOS BROADBAND RF POWER FET

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The RF MOSFET Line 125W, 200MHz

文件：333.77 Kbytes Page：11 Pages

封装/外壳：211-11，2 型 包装：散装 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 125W, 200MHz

The RF MOSFET Line

文件：333.77 Kbytes Page：11 Pages

The RF MOSFET Line 125W, 200MHz

文件：842.41 Kbytes Page：12 Pages

Barebones AVR dev. board

• Printed circuit board • Blank ATMEGA328 with internal 1 MHz oscillator selected (default) • 28-DIP socket • 6-pin ISP AVR programming header • 0.1uF ceramic capacitor • 5mm diffused red LED • Resistor for LED

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Assembly and Handling Information

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HEX D-TYPE FLIP-FLOP

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