N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

The RF MOSFET Line 125W, 200MHz

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

封装/外壳：211-11，2 型 包装：散装 描述：FET RF 65V 150MHZ 211-11 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-CHANNEL MOS BROADBAND RF POWER FET

文件：177.8 Kbytes Page：9 Pages

The RF MOSFET Line 125W, 200MHz

文件：333.77 Kbytes Page：11 Pages

The RF MOSFET Line

文件：333.77 Kbytes Page：11 Pages

The RF MOSFET Line 125W, 200MHz

文件：842.41 Kbytes Page：12 Pages

Radiation Hardened Hex D-Type Flip-Flop with Reset

The Radiation Hardened ACS174MS is a Hex D-Type FlipFlop with Reset. Information at the D input is transferred to the Q output on the positive-going transition of the clock. All six flip-flops are controlled by a common clock (CP) and a common reset (MR). Resetting is accomplished by a LOW level i

Radiation Hardened Hex D-Type Flip-Flop with Reset

The Radiation Hardened ACS174MS is a Hex D-Type FlipFlop with Reset. Information at the D input is transferred to the Q output on the positive-going transition of the clock. All six flip-flops are controlled by a common clock (CP) and a common reset (MR). Resetting is accomplished by a LOW level i

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

Assembly and Handling Information

文件：1.39239 Mbytes Page：10 Pages

HEX D-TYPE FLIP-FLOP

文件：833.89 Kbytes Page：14 Pages