P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

P-Channel JFET Switch

FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching APPLICATIONS • Analog Switches • Choppers • Commutators

SINGLE P-CHANNEL JFET SWITCH

FEATURES • Direct Replacement For SILICONIX J/SST174 SERIES • LOW ON RESISTANCE rDS(on) ≤ 85Ω • LOW GATE OPERATING CURRENT ID(off) = 10pA

P-Channel Switch

This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Linear Systems replaces discontinued Siliconix J174

The J174 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 n-channel family, the J174 simplifies series-shunt switching applications FEATURES ▪ DIRECT REP

P-channel FET

P-channel silicon field-effect transistors

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：JFET P-CH 30V 0.35W TO92 分立半导体产品 晶体管 - JFET

P-Channel Silicon Junction Field-Effect Transistor

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P-Channel JFETs

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P-Channel JFETs

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P-Channel Switch

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：JFET P-CH 30V 400MW TO92-3 分立半导体产品 晶体管 - JFET

P-Channel Switch

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P-Channel JFET Switch

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P-CHANNEL JFET

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N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 35 mA low current operation. It is housed in a very small 6-pin minimold package available on t