丝印代码：G110；Zener Diodes

文件：1.54174 Mbytes Page：3 Pages

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

CATV/MATV/Satellite Splitter (Indoor)

丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET

Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET

Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET

Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G110N06；N-Channel Enhancement Mode Power MOSFET

Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：G1107T；MSPM0G110x Mixed-Signal Microcontrollers

1 Features • Core – Arm® 32-bit Cortex®-M0+ CPU with memory protection unit, frequency up to 80 MHz • Operating characteristics – Extended temperature: –40°C up to 105°C – Wide supply voltage range: 1.62 V to 3.6 V • Memories – Up to 128KB of flash memory with built-in error correction co

丝印代码：G1107T；MSPM0G110xMixed-Signal Microcontrollers

1 Features • Core – Arm® 32-bit Cortex®-M0+ CPU with memory protection unit, frequency up to 80MHz • Operating characteristics – Extended temperature: –40°C up to 105°C – Wide supply voltage range: 1.62V to 3.6V • Memories – Up to 128KB of flash memory with built-in error correction code

丝印代码：G1107T；MSPM0G110xMixed-Signal Microcontrollers

1 Features • Core – Arm® 32-bit Cortex®-M0+ CPU with memory protection unit, frequency up to 80MHz • Operating characteristics – Extended temperature: –40°C up to 105°C – Wide supply voltage range: 1.62V to 3.6V • Memories – Up to 128KB of flash memory with built-in error correction code

丝印代码：G1107T；MSPM0G110xMixed-Signal Microcontrollers

1 Features • Core – Arm® 32-bit Cortex®-M0+ CPU with memory protection unit, frequency up to 80MHz • Operating characteristics – Extended temperature: –40°C up to 105°C – Wide supply voltage range: 1.62V to 3.6V • Memories – Up to 128KB of flash memory with built-in error correction code

丝印代码：G110N03；N-Channel Enhancement Mode MOSFET

文件：866.75 Kbytes Page：10 Pages

丝印代码：G110P04；Single P-Channel Enhancement Mode MOSFET

文件：837.28 Kbytes Page：10 Pages

丝印代码：G110AT；Pch -40V -35A Power MOSFET

文件：2.62014 Mbytes Page：13 Pages

适用于二维红外成像的64 × 64像素图像传感器

G11097-0606S具有由一个CMOS读出电路（ROIC，读出集成电路）和背照式铟镓砷光电二极管组成的混合型结构。每个像素都是由一个铟镓砷光电二极管和一个ROIC通过铟突起电气连接组成的。ROIC内部的时序产生器使得仅仅通过外部数字输入主时钟和主开始信号，就可以获得模拟图像输出和AD-TRIG输出。该器件有64×64个像素，间距为50um，信号从一个视频线中读出。入射到铟镓砷光电二极管上的光被转换为电信号，再通过铟突起输入ROIC。　ROIC中的电信号通过电荷放大器被转换为电压信号，然后通过移位寄存器从视频线中顺序读出。该器件为TO-8密封封装，内含一级TE制冷，成本低，稳定性高。 \n- 通过偏置补偿，获得出色线性度\n- 灵敏度：1600 nV/e-\n- 全像素同步积分（全局快门模式）\n- 操作简单（内置时序产生器）\n- 一级TE制冷\n- 低成本;

Low VF Rectifier Diode

FEATURES * Compliance to RoHS product * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Low forward voltage drop * High temperature soldering guaranteed: 260oC/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3 kg) tension * Plastic package has Unde

Low VF Rectifier Diode

FEATURES * Compliance to RoHS product * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Low forward voltage drop * High temperature soldering guaranteed: 260oC/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3 kg) tension * Plastic package has Unde

Low VF Rectifier Diode

FEATURES * Compliance to RoHS product * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Low forward voltage drop * High temperature soldering guaranteed: 260oC/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3 kg) tension * Plastic package has Unde

Low VF Rectifier Diode

FEATURES * Compliance to RoHS product * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Low forward voltage drop * High temperature soldering guaranteed: 260oC/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3 kg) tension * Plastic package has Unde

Low VF Rectifier Diode

FEATURES * Compliance to RoHS product * GPRC (Glass passivated rectifier chip) inside * Glass passivated cavity-free junction * Low forward voltage drop * High temperature soldering guaranteed: 260oC/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3 kg) tension * Plastic package has Unde

Wideband Multifunction Reception System GaAs MMIC Completely Covers GPS and CDMA

文件：78.93 Kbytes Page：2 Pages

包装：线轴 描述：EXPAND SLEEVING 1/4\ 电缆，电线 - 管理 螺线包材、伸缩套管

包装：线轴 描述：EXPAND SLEEV 1/4\ 电缆，电线 - 管理 螺线包材、伸缩套管

圆形(线缆)连接器

Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging

文件：277.73 Kbytes Page：9 Pages

GLASS PASSIVATED JUNCTION RECTIFIER

文件：43.15 Kbytes Page：2 Pages

GLASS PASSIVATED JUNCTION RECTIFIER

文件：43.15 Kbytes Page：2 Pages

GLASS PASSIVATED JUNCTION RECTIFIER

文件：43.15 Kbytes Page：2 Pages

GLASS PASSIVATED JUNCTION RECTIFIER

文件：43.15 Kbytes Page：2 Pages

GLASS PASSIVATED JUNCTION RECTIFIER

文件：43.15 Kbytes Page：2 Pages

GLASS PASSIVATED JUNCTION RECTIFIER

文件：43.15 Kbytes Page：2 Pages

POWER RECTIFIERS(1.0A,500-1000V)

POWER RECTIFIERS(1.0A,500-1000V)

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

POWER RECTIFIERS(1.0A,500-1000V)

ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS