| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G110N06T | N-Channel Enhancement Mode Power MOSFET Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | |
G110N06T | 60V N Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | |
N-Channel Enhancement Mode Power MOSFET Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：2.10135 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
滨松 |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
SHENZHEN GOSPELL DIGITAL TECHN |
两年内 |
NA |
240 |
实单价格可谈 |
|||
GMT |
23+ |
SOT223 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SOT-223 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
HAMAMATSU |
CAN2 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TI |
24+ |
SOT223 |
6980 |
原装现货,可开13%税票 |
|||
ST |
26+ |
DO-4 |
60000 |
只有原装 可配单 |
|||
G |
23+ |
QFN |
7510 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ST/意法 |
2023+ |
MODULE |
552 |
主打螺丝模块系列 |
|||
GMT |
25+ |
S0T-223 |
2679 |
原装优势!绝对公司现货!可长期供货! |
G110N06T芯片相关品牌
G110N06T规格书下载地址
G110N06T参数引脚图相关
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-16
DdatasheetPDF页码索引
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