| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G110N06T | N-Channel Enhancement Mode Power MOSFET Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | |
G110N06T | 60V N Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | |
N-Channel Enhancement Mode Power MOSFET Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：2.10135 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
滨松 |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
GMT |
25+ |
S0T-223 |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
GMT |
25+ |
SOT223 |
242500 |
原装正品,假一罚十! |
|||
GMT/致新 |
24+ |
NA/ |
115240 |
原装现货,当天可交货,原型号开票 |
|||
ST |
2511 |
DO-4 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
GMT |
12+ |
TO-252 |
45 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
2023+ |
MODULE |
552 |
主打螺丝模块系列 |
|||
HAMAMATSU |
CAN2 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
25+ |
DO-4 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
SMD |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
G110N06T规格书下载地址
G110N06T参数引脚图相关
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2025-2-26FXOS8700CQR1
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-16
DdatasheetPDF页码索引
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