N-ChannelEnhancementModePowerMOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

800VN-ChannelPlanarMOSFET

Features RDSON=1.0Ω@Vgs=10V,Id=5A LowgateCharge(typical45nC) LowCrss(typical6.3pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

800VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V

10A,800VN-CHANNELPOWERMOSFET

文件：199.64 Kbytes Page：6 Pages

N-ChannelPowerMOSFET

文件：352.08 Kbytes Page：6 Pages

iscN-ChannelMOSFETTransistor

文件：296.15 Kbytes Page：2 Pages