丝印代码：G1003A；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

丝印代码：G1003A；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1003B；N-Channel Enhancement Mode Power MOSFET

Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G1003A；N- Enhancement Mode Field Effect Transistor

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G10一微型微动开关

- 体型小巧，结构紧凑\n - 长寿命，高可靠性\n - 全球安全认证\n - 端子种类齐全\n - 配备各种形式操作柄\n- 宽范围的操作力;

High density cell design for ultra low Rdson

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDSS RDS(ON)@10V (typ) ID 100V 135mΩ 5A ● High densi

100V N Channel TRENCH MOSFET

100V N Channel TRENCH MOSFET

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 10 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classi

Integrated Circuit FM/AM IF Amplifier

Description: The NTE1003 monolithic integrated circuit is a high grade FM/AM intermediate frequency amplifier in a 14–Lead DIP type package composed of four individual amplifiers and a voltage regulator. Features: ● Composed of Four Individual Amplifiers ● Low Power Consumption ● High Gain ●

Photo Interrupter

Photo Interrupter For contactless SW, object detection Outline ON1003 is an ultraminiature, highly reliable transmittive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30