N-ChannelEnhancementMOSFET

Description TheG1003Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ItisESDprotected. GeneralFeatures HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevolta

N-ChannelEnhancementModePowerMOSFET

Description TheG1003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

HighdensitycelldesignforultralowRdson

Description TheG1003AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.ItisESDprotected. GeneralFeatures ●VDSSRDS(ON)@10V(typ)ID 100V135mΩ5A ●Highdensi

N-ChannelEnhancementModePowerMOSFET

Description TheG1003Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

WILMAR??ProtectiveRelays-1000Series

Phasefailurerelaysprotectmotors,equipmentandpersonnelfromdamageorinjurycausedbyopenphase,reversedphasesequence,orlowvoltageinathreephasesystem.Modelsareavailablefor50and60Hzwithvoltagesupto575volts.Motorcontrolswitchboardsareacommonapplication. Opera

PulseTransformers

DESCRIPTION The1000seriesareintendedforwidebandandpulseoperations.Theyarealsosuitableforsignalisolationandsmallisolatedpowersupplies.Thecompactfootprintmakesthemidealforapplicationswherespaceisatapremium. FEATURES ■UL94V-0PackageMaterial ■Isolationto2k

PulseTransformers

RoHScompliant UL94V-0packagematerial Isolationto4kVrms Compactfootprint PCBmounting BackwardcompatiblewithSn/Pb solderingsystems

MAGNETICS

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PulseTransformers

文件：109.19 Kbytes Page：2 Pages