N-Channel Enhancement Mode Power MOSFET

Description The G030N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

Trench Mosfet

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 136A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=195A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.2mW

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N-Channel PowerTrench짰 MOSFET 60V, 100A, 3m?

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N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.2m?

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