General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

Features

• 4.5 A, 20 V. RDS(ON) = 32 mW @ VGS = 4.5 V RDS(ON) = 45 mW @ VGS = 2.5 V

• ESD protection diode (note 3)

• High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V

• Low profile TSSOP-8 package

Applications

• Battery protection

• Load switch

• Power management