General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –9.7 A, –20 V. RDS(ON) = 10.0 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V

• Extended VGSS range (±12V) for battery applications

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management