General Description

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V

• RDS(ON) rated for use with 1.8 V logic

• Low gate charge (13nC typical)

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Power management

• Load switch