General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

• Q1: N-Channel

6.2A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V

• Q2: P-Channel

–4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V RDS(on) = 63mΩ @ VGS = –4.5V

• High power handling capability in a widely used surface mount package

• RoHS compliant

Application

• Inverter

• Power Supplies