General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

· Q1: N-Channel

5.5A, 40V RDS(on) = 39mW @ VGS = 10V

RDS(on) = 57mW @ VGS = 7V

· Q2: P-Channel

–4.4A, –40V RDS(on) = 46mW @ VGS = –10V

RDS(on) = 63mW @ VGS = –4.5V

· High power and handling capability in a widely used surface mount package

Application

· Motor Control

· DC/DC conversion