General Description

These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1: N-Channel

■ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A

■ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A

Q2: P-Channel

■ Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A

■ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A

■ 100 UIL Tested

■ RoHS Compliant

Applications

■ Inverter

■ Power Supplies