General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

• Q1: N-Channel 7.5A, 40V RDS(on) = 22mW @ VGS = 10V RDS(on) = 35mW @ VGS = 7V

• Q2: P-Channel –6A, –40V RDS(on) = 31mW @ VGS = –10V RDS(on) = 42mW @ VGS = –4.5V

• Fast switching speed

• High power and handling capability in a widely used surface mount package

Applications

• Synchronous rectifier

• Backlight inverter stage