General Description

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Features

• –0.5 A, –20 V. RDS(ON) = 780 mΩ @ VGS = –4.5 V RDS(ON) = 1200 mΩ @ VGS = –2.5 V

• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).

• Compact industry standard SC70-6 surface mount package

Applications

• Battery management