General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V

RDS(ON)= 0.55 Ω@ VGS= –2.5 V

RDS(ON)= 0.80 Ω@ VGS= –1.8 V

•Low gate charge

• High performance trench technology for extremely low RDS(ON)

• Compact industry standard SC70-6 surface mount package

Applications

•Battery management

•Load switch