General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V

RDS(ON) = 180 mΩ @ VGS = –2.5 V

RDS(ON) = 250 mΩ @ VGS = –1.8 V

• Low gate charge

• High performance trench technology for extremely

low RDS(ON)

• Compact industry standard SC70-6 surface mount

package

Applications

• Battery management

• Load switch