General Description

This N-Channel enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

Features

• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V

RDS(on) = 0.60 Ω @ VGS = 2.7 V.

• Low gate charge (1.64 nC typical)

• Very low level gate drive requirements allowing direct

operation in 3V circuits (VGS(th) < 1.5V).

• Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

• Compact industry standard SC70-6 surface mount

package.

Applications

• Load switch

• Battery protection

• Power management