General Description

This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Features

• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V

RDS(on) = 0.25 Ω @ VGS = -2.5 V.

• Low gate charge (3.3 nC typical).

• High performance trench technology for extremely

low RDS(ON).

• Compact industry standard SC70-6 surface mount

package.

Applications

• Load switch

• Battery protection

• Power management