General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

Features

• 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V

• Fast switching speed

• Low gate charge (4.5 nC typical)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability.

Applications

• DC/DC converter

• Power management

• Load switch