25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Features • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat)

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 25V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2500 V Mean forward current 4645 A Surge current 45 kA

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■ Features ● High reverse voltage VR ● Low forward voltage VF ● Fast reverse recovery time trr

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters