DC-DC Converter

TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode (Twin type · Cathode Common) Features • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and a fast recovery and low forward voltage Schottky barrier diode facilitating high-sens

DVSR CODEC

Brief Description\nThe FX802 DVSR Codec contains: A Continuously Variable Slope Delta Modulation (CVSD)\nencoder and decoder. Control and timing circuitry for up to 4Mbits of external Dynamic Random Access Memory (DRAM). “C-BUS” µProcessor interface and control logic. When used with external DRAM, t

DC-DC Converter

DVSR CODEC

文件：129.32 Kbytes Page：14 Pages

DVSR CODEC

文件：129.32 Kbytes Page：14 Pages

DVSR codec

DVSR CODEC

文件：129.32 Kbytes Page：14 Pages

DVSR CODEC

文件：129.32 Kbytes Page：14 Pages

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat