位置：首页 > IC中文资料第8215页 > FX6ASJ
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):0.29Ω •ID:–6A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):40ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):0.29Ω •ID:–6A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):40ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX)................................................0.21Ω •ID......................................................................–6A •IntegratedFastRecoveryDi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX)................................................0.21Ω •ID......................................................................–6A •IntegratedFastRecoveryDi | POWEREX Powerex Power Semiconductors |  | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):0.21Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):0.21Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................0.58Ω •ID......................................................................–6A •IntegratedFastRecoveryDio | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................0.58Ω •ID......................................................................–6A •IntegratedFastRecoveryDio | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):0.58Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):80ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):0.58Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):80ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS............................................................–150V •rDS(ON)(MAX)................................................0.53Ω •ID.....................................................................–6A •IntegratedFastRecoveryDiode | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–150V •rDS(ON)(max):0.53Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):100ns | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS............................................................–150V •rDS(ON)(MAX)................................................0.53Ω •ID.....................................................................–6A •IntegratedFastRecoveryDiode | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–150V •rDS(ON)(max):0.53Ω •ID:–6A •IntegratedFastRecoveryDiode(TYP.):100ns | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET 文件：199.03 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET 文件：199.03 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET 文件：199.03 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
isc P-Channel MOSFET Transistor 文件：378.97 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
isc P-Channel MOSFET Transistor 文件：379.23 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc P-Channel MOSFET Transistor 文件：379.4 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
FX6ASJ产品属性
- 类型
描述
- 型号
FX6ASJ
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
High-Speed Switching Use Pch Power MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ROHM/罗姆 |
24+ |
TO-252 |
5698 |
只做原厂渠道 可追溯货源 |
|||
ROHM |
08+ |
TO-252 |
5698 |
普通 |
|||
RENESAS/瑞萨 |
22+ |
SOT252 |
20000 |
保证原装正品,假一陪十 |
|||
ROHM/罗姆 |
21+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
RENESAS |
23+ |
SOT223 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
RENESAS |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
RENESAS/瑞萨 |
23+ |
SOT-252 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
24+ |
SOT223 |
221 |
||||
VB |
25+ |
MP-3A |
5015 |
原装正品,假一罚十! |
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FX6ASJ规格书下载地址
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