Schottky Diode

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封装/外壳：TO-249AB 包装：散装 描述：DIODE SCHOTTKY 30V 80A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Diodes - Low VF

Schottky Rectifiers

160 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excelle

N-channel TrenchMOS-TM logic level FET

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