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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS23A0D | 9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSS23A0D产品属性
- 类型
描述
- 型号
FSS23A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
F |
05+ |
原厂原装 |
4290 |
只做全新原装真实现货供应 |
|||
N/A |
2022 |
SOP/8 |
2058 |
原厂原装正品,价格超越代理 |
|||
VB |
2019 |
SOIC8 |
55000 |
绝对原装正品假一罚十! |
|||
SANYO/三洋 |
20+ |
SOP-8 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
SANYO/三洋 |
23+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
|||
SANYO三洋 |
2020+ |
SOP-8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SANYO/三洋 |
21+ROHS |
SOP-8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SANYO/三洋 |
SOP-8 |
265209 |
假一罚十原包原标签常备现货! |
||||
F |
23+ |
65480 |
|||||
SANYO/三洋 |
23+ |
SOP-8 |
24190 |
原装正品代理渠道价格优势 |
FSS23A0D芯片相关品牌
FSS23A0D规格书下载地址
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https://hch01.114ic.com/
2020-11-13FSX027WF 假一罚十
原厂原包装绝无虚假
2020-6-3FSU05B60
FSU05B60，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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