位置：首页 > IC中文资料第6314页 > FSS23A0D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS23A0D | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |   | |
FSS23A0D | 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |
FSS23A0D产品属性
- 类型
描述
- 型号
FSS23A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
|||
SANYO/三洋 |
25+ |
SOP-8 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
SANYO/三洋 |
20+ |
SOP-8 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
25+ |
SOP |
2700 |
全新原装自家现货优势! |
||||
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
||||
SANYO/三洋 |
23+ |
SOP-8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAGOR |
23+ |
NA |
6716 |
专做原装正品,假一罚百! |
|||
SANYO |
24+ |
SOP-8 |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SANYO |
SOP-8 |
35500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SANYO/三洋 |
21+ |
SOP-8 |
6796 |
优势供应 实单必成 可13点增值税 |
FSS23A0D芯片相关品牌
FSS23A0D规格书下载地址
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https://hch01.114ic.com/
2020-11-13FSU05B60
FSU05B60，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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