| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS13 | 1 Amp. Surface Mounted Schottky Barrier Rectifier [FAGOR] 1 Amp. Surface Mounted Schottky Barrier Rectifier • Metal Silicon Junction, majority carrier conduction • High current capability, low forward voltage drop • Guardring for overvoltage protection • Low power loss, high efficiency • High surge capability • Plastic material carries | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
FSS13 | Schottky Rectifiers | FAGOR 法格电子 | | |
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
Load Switching Applications Load Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | INTERSIL | | ||
P-Channel Silicon MOSFET Load Switching Applications | ONSEMI 安森美半导体 | | ||
包装：散装 描述：SWITCH SLIDE SPST 0.4VA MAX @48V 开关 滑动开关 | ETC 知名厂家 | ETC | | |
包装：散装 描述：SWITCH SLIDE SPST 0.4VA MAX @48V 开关 滑动开关 | ETC 知名厂家 | ETC | | |
P-Channel Silicon MOSFET Load Switching Applications | ONSEMI 安森美半导体 | |
FSS13产品属性
- 类型
描述
- IF(AV) (A)：
1
- VRRM (V)：
30
- TRR (ns)：
>10
- Vf (V)：
0.50
- IFSM (A)：
30
- Outline：
DO214AC/SMA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
SOP8 |
1000 |
原装正品现货 |
|||
SANYO |
25+ |
SOP-8P |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
SANYO |
02+ |
SOP8 |
2600 |
全新原装进口自己库存优势 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO |
2025+ |
SOP8 |
3565 |
全新原厂原装产品、公司现货销售 |
|||
25+ |
原厂封装 |
11888 |
专做原装正品,假一罚百! |
||||
SANYO/三洋 |
新年份 |
SOP-8 |
17522 |
原装正品现货,实单带TP来谈! |
|||
SANYO |
24+ |
SOT-3857&NBS |
6500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SANYO/三洋 |
2450+ |
SOP-8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SANYO/三洋 |
25+ |
SOP-8 |
20000 |
原装 |
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DdatasheetPDF页码索引
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