位置：首页 > IC中文资料第6691页 > FSS13
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS13 | 1 Amp. Surface Mounted Schottky Barrier Rectifier [FAGOR] 1 Amp. Surface Mounted Schottky Barrier Rectifier • Metal Silicon Junction, majority carrier conduction • High current capability, low forward voltage drop • Guardring for overvoltage protection • Low power loss, high efficiency • High surge capability • Plastic material carries | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
FSS13 | Schottky Rectifiers | FAGOR 法格电子 | | |
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil | | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
Load Switching Applications Load Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | | ||
DC/DC Converter Applications DC/DC Converter Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. | SANYO 三洋 | | ||
Load Switching Applications Load Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | | ||
P-Channel Silicon MOSFET Load Switching Applications | ONSEMI 安森美半导体 | | ||
包装：散装 描述：SWITCH SLIDE SPST 0.4VA MAX @48V 开关 滑动开关 | ETC 知名厂家 | ETC | | |
包装：散装 描述：SWITCH SLIDE SPST 0.4VA MAX @48V 开关 滑动开关 | ETC 知名厂家 | ETC | | |
P-Channel Silicon MOSFET Load Switching Applications | ONSEMI 安森美半导体 | |
FSS13产品属性
- 类型
描述
- 型号
FSS13
- 功能描述
1 Amp. Surface Mounted Schottky Barrier Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
02+ |
SOP8 |
2600 |
全新原装进口自己库存优势 |
|||
SANYO |
17+ |
SOP8 |
9988 |
只做原装进口,自己库存 |
|||
SANYO |
24+ |
SOP-8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SANYO/三洋 |
23+ |
SOP-8 |
3038 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SANYO/三洋 |
新年份 |
SOP-8 |
17522 |
原装正品现货,实单带TP来谈! |
|||
SANYO/三洋 |
24+ |
SOP8 |
990000 |
明嘉莱只做原装正品现货 |
|||
SANYO |
24+ |
SOP8 |
1000 |
原装正品现货 |
|||
SANYO |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
|||
SANYO |
SOP8 |
788 |
正品原装--自家现货-实单可谈 |
||||
三年内 |
1983 |
只做原装正品 |
FSS13规格书下载地址
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DdatasheetPDF页码索引
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