位置：首页 > IC中文资料第6244页 > FSL9130D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL9130D | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL |   | |
FSL9130D | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs | RENESAS 瑞萨 | | |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH
| TOSHIBA 东芝 | | ||
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件：20.72 Kbytes Page：2 Pages | SEME-LAB | | ||
P-CHANNEL POWER MOSFET 文件：16.9 Kbytes Page：2 Pages | SEME-LAB | |
FSL9130D产品属性
- 类型
描述
- 型号
FSL9130D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAI |
23+ |
DIP8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FSC |
20+ |
8-DIP |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD/仙童 |
25+ |
DIP-8 |
30000 |
代理全新原装现货,价格优势 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
ON/安森美 |
2447 |
DIP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
23+ |
DIP8 |
50000 |
全新原装正品现货,支持订货 |
|||
25+23+ |
原厂原包 |
23976 |
绝对原装正品现货,全新深圳原装进口现货 |
||||
NIEC |
24+ |
TO-220F-2pin |
8866 |
FSL9130D芯片相关品牌
FSL9130D规格书下载地址
FSL9130D参数引脚图相关
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2019-4-2
DdatasheetPDF页码索引
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