FS50价格

参考价格:¥323.4757

型号:FS50R06KE3 品牌:Infineon 备注:这里有FS50多少钱,2024年最近7天走势,今日出价,今日竞价,FS50批发/采购报价,FS50行情走势销售排行榜,FS50报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FS50

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

文件:685.53 Kbytes Page:9 Pages

XPPOWER

XP Power Limited

XPPOWER
FS50

LINEAR HALL-EFFECT SENSORS

文件:57.35 Kbytes Page:7 Pages

FEELINGFEELING

遠翔科技遠翔科技股份有限公司

FEELING

Flashers and Tower Lighting Controls

Description TheFS500Seriesflashrateisadjustablefrom10to100FPM. Alocknutisprovidedtoholdselectedflashrate.Thelong-life electroniccircuitcombinedwithaqualityelectromechanical relayprovidesflexibilityandreliabilityinmostapplications. Operation Uponapplication

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................30V ●rDS(ON)(MAX)..............................................................23mΩ ●ID..........................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................30V ●rDS(ON)(MAX)..............................................................23mΩ ●ID..........................................................................

POWEREX

POWEREX

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................30V ●rDS(ON)(MAX)..............................................................23mΩ ●ID..........................................................................

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................19mΩ ●ID............................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................19mΩ ●ID............................................................................

POWEREX

POWEREX

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................19mΩ ●ID............................................................................

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •DriveVoltage:4V •VDSS:30V •rDS(ON)(max):12.2mΩ •ID:50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •DriveVoltage:4V •VDSS:30V •rDS(ON)(max):12.2mΩ •ID:50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................60V ●rDS(ON)(MAX)..............................................................22mΩ ●ID..........................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................60V ●rDS(ON)(MAX)..............................................................22mΩ ●ID..........................................................................

POWEREX

POWEREX

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:60V •rDS(ON)(max):22mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):65ns •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:60V •rDS(ON)(max):22mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):65ns •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

●10VDRIVE ●VDSS...............................................................................100V ●rDS(ON)(MAX)..............................................................55mΩ ●ID.........................................................................................50A ●Integ

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

●10VDRIVE ●VDSS...............................................................................100V ●rDS(ON)(MAX)..............................................................55mΩ ●ID.........................................................................................50A ●Integ

POWEREX

POWEREX

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:100V •rDS(ON)(max):55mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):105ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:100V •rDS(ON)(max):55mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):105ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS...............................................................................150V ●rDS(ON)(MAX)..............................................................31mΩ ●ID............................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS...............................................................................150V ●rDS(ON)(MAX)..............................................................31mΩ ●ID............................................................................

POWEREX

POWEREX

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:150V •rDS(ON)(max):31mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):130ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:150V •rDS(ON)(max):31mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):130ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................19mΩ ●ID............................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................19mΩ ●ID............................................................................

POWEREX

POWEREX

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................19mΩ ●ID............................................................................

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:30V •rDS(ON)(max):12.2mΩ •ID:50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:30V •rDS(ON)(max):12.2mΩ •ID:50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................60V ●rDS(ON)(MAX).............................................................20mΩ ●ID............................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................60V ●rDS(ON)(MAX).............................................................20mΩ ●ID............................................................................

POWEREX

POWEREX

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●4VDRIVE ●VDSS.................................................................................60V ●rDS(ON)(MAX).............................................................20mΩ ●ID............................................................................

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:60V •rDS(ON)(max):14mΩ •ID:50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:60V •rDS(ON)(max):14mΩ •ID:50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):50ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

●4VDRIVE ●VDSS................................................................................100V ●rDS(ON)(MAX)..............................................................48mΩ ●ID.........................................................................................50A ●Integr

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

●4VDRIVE ●VDSS................................................................................100V ●rDS(ON)(MAX)..............................................................48mΩ ●ID.........................................................................................50A ●Integr

POWEREX

POWEREX

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:100V •rDS(ON)(max):48mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):90ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:100V •rDS(ON)(max):48mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):90ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED SWITCHING USE

●4VDRIVE ●VDSS................................................................................150V ●rDS(ON)(MAX)..............................................................30mΩ ●ID.........................................................................................50A ●Integr

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

●4VDRIVE ●VDSS................................................................................150V ●rDS(ON)(MAX)..............................................................30mΩ ●ID.........................................................................................50A ●Integr

POWEREX

POWEREX

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:150V •rDS(ON)(max):30mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):125ns •Viso:2000A Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:4V •VDSS:150V •rDS(ON)(max):30mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):125ns •Viso:2000A Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode

EconoPACK™3withfasttrench/fieldstopIGBT³andEmCon3diode

eupeceupec GmbH

欧派克

eupec

EconoPACK3 mit schnellem Trench

EconoPACK™3withfasttrench/fieldstopIGBT³andEmitterControlled3diode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT/NTC

ElectricalFeatures •Increasedblockingvoltagecapabilityto650V •LowSwitchingLosses •LowVCEsat •TrenchIGBT3 MechanicalFeatures •Al2O3SubstratewithLowThermalResistance •HighPowerDensity •IntegratedNTCtemperaturesensor •Compactdesign •PressFITContactTechnol

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

EconoPACK2 Modul mit schnellem Trench

EconoPACK™2withfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

echnische Information / technical information

EconoPACK™2withfasttrench/fieldstopIGBT3andEmConHighEfficiencydiode

eupeceupec GmbH

欧派克

eupec

EconoPACK™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features •Electricalfeatures -VCES=1200V -ICnom=50A/ICRM=100A -TRENCHSTOPTMIGBT7 -LowVCE,sat -Overloadoperationupto175°C •Mechanicalfeatures -Highpowerandthermalcyclingcapability -IntegratedNTCtemperaturesensor -Copperbaseplate -Al2O3substratew

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................60V ●rDS(ON)(MAX)..............................................................22mΩ ●ID..........................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................60V ●rDS(ON)(MAX)..............................................................22mΩ ●ID..........................................................................

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS..................................................................................60V ●rDS(ON)(MAX)..............................................................22mΩ ●ID..........................................................................

POWEREX

POWEREX

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS................................................................................100V ●rDS(ON)(MAX)..............................................................55mΩ ●ID............................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS................................................................................100V ●rDS(ON)(MAX)..............................................................55mΩ ●ID............................................................................

POWEREX

POWEREX

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS................................................................................100V ●rDS(ON)(MAX)..............................................................55mΩ ●ID............................................................................

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=55mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS................................................................................150V ●rDS(ON)(MAX)..............................................................31mΩ ●ID............................................................................

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEEDSWITCHINGUSE ●10VDRIVE ●VDSS................................................................................150V ●rDS(ON)(MAX)..............................................................31mΩ ●ID............................................................................

POWEREX

POWEREX

POWEREX

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:150V •rDS(ON)(max):31mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):130ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:150V •rDS(ON)(max):31mΩ •ID:50A •IntegratedFastRecoveryDiode(TYP.):130ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

High-Speed Switching Use Nch Power MOS FET

Features •Drivevoltage:10V •VDSS:250V •rDS(ON)(max):0.068Ω •ID:50A Applications Switchingmodepowersupply,plasmadisplayTVs,DC-DCconverters,etc.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

FS50产品属性

  • 类型

    描述

  • 型号

    FS50

  • 制造商

    CATHEDRAL

  • 功能描述

    SUSPENSION FILES F/S PK50

更新时间:2024-5-12 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
23+
-
921
原厂订货渠道,支持BOM配单一站式服务
Infineon(英飞凌)
23+
NA/
8735
原厂直销,现货供应,账期支持!
Infineon/英飞凌
23+
Module
1262
原厂原装正品现货,代理渠道,支持订货!!!
Infineon(英飞凌)
23+
AGECONOPP2
6000
infineon
16+
MODULE
2100
公司大量全新现货 随时可以发货
INFINEON/英飞凌
2024+实力库存
MODULE
5
只做原厂渠道 可追溯货源
RENESAS/瑞萨
TO252
7906200
TAG
24+25+/26+27+
网络-变压器
12680
一一有问必回一特殊渠道一有长期订货一备货HK仓库
Siargo
24+
SIP
9000
只做原装正品 有挂有货 假一赔十
MIT
21+
TO-220
60000
原装正品进口现货

FS50芯片相关品牌

  • EON
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

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