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FS50价格

参考价格：￥323.4757

型号：FS50R06KE3 品牌：Infineon 备注：这里有FS50多少钱，2025年最近7天走势，今日出价，今日竞价，FS50批发/采购报价，FS50行情走势销售排行榜，FS50报价。

型号	功能描述	生产厂家企业	LOGO
FS50	ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS 文件：685.53 Kbytes Page：9 Pages	XPPOWER	XPPOWER
FS50	LINEAR HALL-EFFECT SENSORS 文件：57.35 Kbytes Page：7 Pages	FEELING 远翔科技	FEELING
FS50	LINEARHALL-EFFECT SENSORS	FEELING 远翔科技	FEELING
FS5082	FS5082升压型两串锂电池充电IC，FS5082是一款工作于3.0V到6.5V的PFM升压型双节锂电池充电控制集成电路。 FS5082是一款工作于3.0V到6.5V的PFM升压型双节锂电池充电控制集成电路。FS5082采用恒流和恒压模式(Quasi-CyrM)对电池进行充电管理，内部集成有基准电压源，电感电流检测单元电池电压检测电路和内置场效应晶体管驱动电路等，具有外部元件少，电路简单等优点。当接通输入电源后，FS5082进入充电状态控制内部N沟道MOSFET导通，电感电流上升，当上升到外部电流检测电阻设置的上限时，内部N沟道 MOSFET截止，电感电流下降，电感中的能量转移到电池中。当电感电流下降到外部电流检测电阻设置的下限时，内部N沟道MOSFET再次导通，如此循环。当BAT管脚电压第一次达到内部设置的8.	fanhaiic 泛海微电子 PDF上传者：深圳市泛海微电子有限公司	fanhaiic
FS500	Flashers and Tower Lighting Controls Description The FS500 Series flash rate is adjustable from 10 to 100 FPM. A locknut is provided to hold selected flash rate. The long-life electronic circuit combined with a quality electromechanical relay provides flexibility and reliability in most applications. Operation Upon application	Littelfuse 力特	Littelfuse
FS50AS-03	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ..............................................................23mΩ ● ID ..........................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50AS-03	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ..............................................................23mΩ ● ID ..........................................................................	POWEREX	POWEREX
FS50AS-03	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ..............................................................23mΩ ● ID ..........................................................................	RENESAS 瑞萨	RENESAS
FS50ASJ-03	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50ASJ-03	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................	POWEREX	POWEREX
FS50ASJ-03	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................	RENESAS 瑞萨	RENESAS
FS50ASJ-03F	High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50ASJ-03F-T13	High-Speed Switching Use Nch Power MOS FET Features • Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KM-06	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................22mΩ ● ID ..........................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50KM-06	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................22mΩ ● ID ..........................................................................	POWEREX	POWEREX
FS50KM-06	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 65 ns • Viso : 2000 V	RENESAS 瑞萨	RENESAS
FS50KM-06-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 65 ns • Viso : 2000 V	RENESAS 瑞萨	RENESAS
FS50KM-2	HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 100V ● rDS (ON) (MAX) ..............................................................55mΩ ● ID ......................................................................................... 50A ● Integ	Mitsubishi 三菱电机	Mitsubishi
FS50KM-2	Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 100V ● rDS (ON) (MAX) ..............................................................55mΩ ● ID ......................................................................................... 50A ● Integ	POWEREX	POWEREX
FS50KM-2	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 55 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 105 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KM-2-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 55 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 105 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KM-3	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 150V ● rDS (ON) (MAX) ..............................................................31mΩ ● ID ............................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50KM-3	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 150V ● rDS (ON) (MAX) ..............................................................31mΩ ● ID ............................................................................	POWEREX	POWEREX
FS50KM-3	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 150 V • rDS(ON) (max) : 31 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 130 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KM-3-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 150 V • rDS(ON) (max) : 31 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 130 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-03	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50KMJ-03	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................	POWEREX	POWEREX
FS50KMJ-03	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................	RENESAS 瑞萨	RENESAS
FS50KMJ-03F	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-03F-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-06	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50KMJ-06	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................	POWEREX	POWEREX
FS50KMJ-06	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................	RENESAS 瑞萨	RENESAS
FS50KMJ-06F	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 14 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-06F-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 14 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-2	HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................48mΩ ● ID ......................................................................................... 50A ● Integr	Mitsubishi 三菱电机	Mitsubishi
FS50KMJ-2	Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................48mΩ ● ID ......................................................................................... 50A ● Integr	POWEREX	POWEREX
FS50KMJ-2	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 100 V • rDS(ON) (max) : 48 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 90 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-2-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 100 V • rDS(ON) (max) : 48 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 90 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-3	HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................150V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID ......................................................................................... 50A ● Integr	Mitsubishi 三菱电机	Mitsubishi
FS50KMJ-3	Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................150V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID ......................................................................................... 50A ● Integr	POWEREX	POWEREX
FS50KMJ-3	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 30 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 125 ns • Viso : 2000 A Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50KMJ-3-A8	High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 30 mΩ • ID : 50 A • Integrated Fast Recovery Diode (TYP.) : 125 ns • Viso : 2000 A Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.	RENESAS 瑞萨	RENESAS
FS50R06KE3	EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode	eupec	eupec
FS50R06KE3	EconoPACK3 mit schnellem Trench EconoPACK™3 with fast trench/fieldstop IGBT³ and Emitter Controlled3 diode	Infineon 英飞凌	Infineon
FS50R07W1E3_B11A	EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT/NTC Electrical Features • Increased blocking voltage capability to 650V • Low Switching Losses • Low VCEsat • Trench IGBT 3 Mechanical Features • Al2O3 Substrate with Low Thermal Resistance • High Power Density • Integrated NTC temperature sensor • Compact design • PressFIT Contact Technol	Infineon 英飞凌	Infineon
FS50R12KT3	echnische Information / technical information EconoPACK™2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode	eupec	eupec
FS50R12KT3	EconoPACK2 Modul mit schnellem Trench EconoPACK™2 with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode	Infineon 英飞凌	Infineon
FS50R12KT3BPSA1	EconoPACK2 Modul mit schnellem Trench EconoPACK™2 with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode	Infineon 英飞凌	Infineon
FS50R12N2T7_B15	EconoPACK™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 50 A / ICRM = 100 A - TRENCHSTOPTM IGBT7 - Low VCE,sat - Overload operation up to 175°C • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al2O3 substrate w	Infineon 英飞凌	Infineon
FS50SM-06	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................22mΩ ● ID ..........................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50SM-06	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................22mΩ ● ID ..........................................................................	RENESAS 瑞萨	RENESAS
FS50SM-06	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................22mΩ ● ID ..........................................................................	POWEREX	POWEREX
FS50SM-06	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =22mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
FS50SM-2	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................55mΩ ● ID ............................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50SM-2	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................55mΩ ● ID ............................................................................	POWEREX	POWEREX
FS50SM-2	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................55mΩ ● ID ............................................................................	RENESAS 瑞萨	RENESAS
FS50SM-2	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =55mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
FS50SM-3	HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................150V ● rDS (ON) (MAX) ..............................................................31mΩ ● ID ............................................................................	Mitsubishi 三菱电机	Mitsubishi
FS50SM-3	Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................150V ● rDS (ON) (MAX) ..............................................................31mΩ ● ID ............................................................................	POWEREX	POWEREX

FS50产品属性

类型
描述
型号
FS50
制造商
CATHEDRAL
功能描述
SUSPENSION FILES F/S PK50

FS50供应商更多...

更新时间：2025-11-26 11:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	FS500R17OE4D	INFINEON/英飞凌	23+	MODULE	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市富芯拓展电子有限公司	FS500E2T	FREESOR	20+	Sensors	119	原装	询价
现代芯城（深圳）科技有限公司	FS5001L-2000-E-A		24+	N/A	64000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市坤融电子科技有限公司	FS50R12U1T4	INFINEON/英飞凌	2025+	NA	4000	原装进口价格优请找坤融电子!	询价
深圳市能元时代电子有限公司	FS50	国产替代	23+	TO92S	25518	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市安富世纪电子有限公司	FS50	ST	23+	SOT-153	7300	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	FS500R17OE4D	Infineon(英飞凌)	2447	AG-ECONOPP-2	31500	4个/托盘一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科恒伟业电子有限公司	FS50R12U1T4	INFINEON	23+	N/A	6850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市宏捷佳电子科技有限公司	FS501F	FHLKA	2023+	QFP	53500	正品,原装现货	询价
深圳市拓亿芯电子有限公司	FS50R06W1E3	INFINEON/英飞凌	25+		500	全新原装现货,价格优势	询价

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FS50数据表相关新闻

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DdatasheetPDF页码索引

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