Nch POWER MOSFET HIGH-SPEED SWITCHING USE

● VDSS ................................................................................ 500V ● rDS (ON) (MAX) .............................................................. 0.90Ω ● ID ..........................................................................................10A APPLICATION S

MITSUBISHI Nch POWER MOSFET

● VDSS ................................................................................ 500V ● rDS (ON) (MAX) .............................................................. 0.90Ω ● ID ..........................................................................................10A APPLICATION S

HIGH-SPEED SWITCHING USE

● VDSS ................................................................................ 500V ● rDS (ON) (MAX) .............................................................. 0.90Ω ● ID ..........................................................................................10A APPLICATION S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.90Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HIGH-SPEED SWITCHING USE

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................