HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................500V ●rDS(ON)(MAX).............................................................1.13Ω ●ID........................................................................................

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................500V ●rDS(ON)(MAX).............................................................1.13Ω ●ID........................................................................................

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.90Ω ●ID..........................................................................................10A APPLICATION S

MITSUBISHINchPOWERMOSFET

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.90Ω ●ID..........................................................................................10A APPLICATION S