GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.5 Amperes Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound ● Glass passivated junction in R-3 package ● 2.5 ampere operation at TA=55 with no

GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free

GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

PRV : 50 - 1000 Volts Io : 2.5 Amperes FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free

Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 2.5A

Reverse Voltage 50 to 1000V Forward Current 2.5A Features • Glass passivated chip • Low reverse leakage • High forward surge capability • High temperature soldering guaranteed: 260℃/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension • Lead and body according with RoHS standard

FAST RECOVER Y RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V CURRENT: 2.5 A Features ● Diffused Junction ● Low Forward Voltage Drop ● High Reliability ● High Surge Current Capability ● Glass passivated device

2.5A GLASS PASSIVATED FAST RECOVERY DIODE

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

Plastic Fast Recover Rectifier

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GLASS PASSIVATED JUNCTION

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4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)