200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on)= 1.2Ω@VGS= 10 V • Low gate charge ( typical 4.8 nC) • Low Crss ( typical 6.0 pF) • Fast

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

丝印：5N20A；N-Channel Enhancement Mode Power MOSFET

Description The 5N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l DC Motor Control and Class D Amplifier l Uninterruptible Power Supply (UPS) l Automotive

丝印：DPAK；N-Channel 200 V (D-S) MOSFET

文件：2.60721 Mbytes Page：10 Pages

Dual N-Channel 25-V (D-S) MOSFET

文件：1.69754 Mbytes Page：8 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：172.46 Kbytes Page：2 Pages

N-CHANNEL MOSFET in a TO-252 Plastic Package

文件：1.95544 Mbytes Page：11 Pages