500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.6A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

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500V N-Channel MOSFET

文件：850.39 Kbytes Page：9 Pages

100 avalanche tested, RoHS Compliant

文件：850.39 Kbytes Page：9 Pages

MOSFET N-CH 500V 2.6A IPAK

Power MOSFET, N-Channel, QFET®, 500 V, 2.6 A, 2.7 Ω, IPAK

N 沟道 QFET® MOSFET 500V，2.6A，2.7Ω

MOSFET - Power, N-Channel, UniFET II, Ultra FRFET 500 V, 2 A, 3

Description UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche en

500V N-Channel MOSFET

Features • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

4A, 500V N-CHANNEL POWER MOSFET

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Fast Switching

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4 Amps, 500 Volts N-CHANNEL POWER MOSFET

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