500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.6A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

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Power MOSFET, N-Channel, QFET®, 500 V, 2.6 A, 2.7 Ω, IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •2.6A, 500V, RDS(on)= 2.7Ω（最大值）@VGS = 10 V, ID = 1.3A栅极电荷低（典型值：10nC)\n•低 Crss（典型值6.0pF)\n•100% 经过雪崩击穿测试\n• 100% Avalanche Tested;

N 沟道 QFET® MOSFET 500V，2.6A，2.7Ω

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 • 2.6A, 500V, RDS(on) = 2.7Ω（最大值）@VGS = 10 V, ID = 1.3A栅极电荷低（典型值：10nC)\r\n• 低 Crss（典型值6.0pF)\r\n• 100% 经过雪崩击穿测试\r\n• 100% Avalanche Tested;

500V N-Channel MOSFET

文件：850.39 Kbytes Page：9 Pages

MOSFET N-CH 500V 2.6A IPAK

100 avalanche tested, RoHS Compliant

文件：850.39 Kbytes Page：9 Pages

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PowerMOS transistor Isolated version of PHP4N50E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

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