PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor

MOSFET - Power, N-Channel, UniFET II, Ultra FRFET 500 V, 2 A, 3

Description UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche en

500V N-Channel MOSFET

Features • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

4 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：171.71 Kbytes Page：6 Pages

4A, 500V N-CHANNEL POWER MOSFET

文件：183.98 Kbytes Page：6 Pages

Fast Switching

文件：67.85 Kbytes Page：2 Pages