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型号	功能描述	生产厂家企业	LOGO
FQI4N50	500V N-Channel MOSFET Features • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability	FAIRCHILD 仙童半导体	FAIRCHILD
FQD4N50	500V N-Channel MOSFET	FAIRCHILD 仙童半导体	FAIRCHILD
PHP4N50E	PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies	PHILIPS 飞利浦	PHILIPS
PHX4N50E	PowerMOS transistor Isolated version of PHP4N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow	PHILIPS 飞利浦	PHILIPS
MTP4N50E	TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS 文件：254.61 Kbytes Page：8 Pages	MOTOROLA 摩托罗拉	MOTOROLA