位置：首页 > IC中文资料第4122页 > FQU2N50B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU2N50B | 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FQU2N50B | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=1.6A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
2 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.38 Kbytes Page：6 Pages | UTC 友顺 | | ||
2A, 500V N-CHANNEL POWER MOSFET 文件：181.74 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：208.82 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：208.82 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：208.82 Kbytes Page：7 Pages | UTC 友顺 | |
FQU2N50B产品属性
- 类型
描述
- 型号
FQU2N50B
- 功能描述
MOSFET Power MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
两年内 |
N/A |
5040 |
原装现货,实单价格可谈 |
|||
Fairchild |
23+ |
33500 |
|||||
onsemi(安森美) |
24+ |
TO-251-3 |
11346 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHI |
23+ |
TO-251 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
FAIRCHILD |
24+ |
TO-251 |
5000 |
只做原装公司现货 |
|||
FAIRCHILD/仙童 |
24+ |
TO251 |
54000 |
郑重承诺只做原装进口现货 |
|||
FAIRCHILD/仙童 |
24+ |
TO251 |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD |
24+ |
NA |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD/仙童 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
|||
ON/安森美 |
25+ |
SMD |
8880 |
原装认准芯泽盛世！ |
FQU2N50B规格书下载地址
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2021-1-14
DdatasheetPDF页码索引
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