N-Channel QFET MOSFET 800 V, 1.0 A, 20

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =20Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

分立式 MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy • 1.0A, 800V, RDS(on) = 20Ω (Max.) @ VGS = 10 V, ID = 0.5 A\n• Low Gate Charge (Typ. 5.5 nC)\n• Low Crss (Typ. 2.7 pF)\n• 100% Avalanche Tested;

N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓

文件：1.27683 Mbytes Page：9 Pages

N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓

文件：1.27683 Mbytes Page：9 Pages

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

800V N-Channel Enhancement Mode MOSFET

FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

High Voltage MOSFET

文件：60.97 Kbytes Page：2 Pages

High Voltage MOSFET

文件：60.97 Kbytes Page：2 Pages