N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

100V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，10 A，180 mΩ，IPAK

N-Channel 100 V (D-S) MOSFET

文件：1.01324 Mbytes Page：7 Pages

N-Channel QFET MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

100V LOGIC N-Channel MOSFET

文件：635.93 Kbytes Page：9 Pages

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Applications: ● Li-Battery Management System ● USB Power Delivery ● BLDC Drive ● Synchronous Rectifica

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12.8A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel 100-V (D-S) MOSFET

文件：773.51 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：354.05 Kbytes Page：4 Pages